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Nanoelectronic Device Applications Handbook by Krzysztof Iniewski, James E. Morris

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65

Influence of Impurity and Dangling Bond Scattering on the Conductance Anomalies of Side-Gated Quantum Point Contacts

J. Wan, J. Charles, M. Cahay, P. P. Das, N. Bhandari and R. S. Newrock

CONTENTS

65.1  Introduction

65.2  Numerical Simulations

65.3  Results

65.3.1  Effect of Impurity Scattering

65.3.2  Effect of Dangling Bond Scattering

65.4  Conclusions

References

65.1  INTRODUCTION

For more than a decade, there have been many experiments reporting anomalies that appear at noninteger values of the quantized conductance G0 in the ballistic conductance regime of quantum point contacts (QPCs) based on GaAs. These include the observation of an anomalous plateau at G ≅ 0.5 G0 [1, 2, 3 and 4] and the well-known “0.7 structure” [5]. The majority ...

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