367
Appendix C: Gallium Arsenide
Parameters
Name Symbol Value Units
Density of states (conduction band) N
c3
4.4 × 10
17
4.4 × 10
23
cm
−3
m
−3
Density of states (valence band) N
v3
8.4 × 10
18
8.4 × 10
24
cm
−3
m
−3
Dielectric constant (relative permittivity)
κ or ε
r
13.2
Effective mass (density of states) of an electron
m
dsn
*
0.067m
o
Effective mass (density of states) of a hole
m
dsp
*
0.48m
o
Effective mass (conductivity) of an electron
m
cn
*
0.067m
o
Effective mass (conductivity) of a hole
m
cp
*
0.34m
o
Effective mass—longitudinal of an electron
m
*
0.067m
o
Effective mass—transverse of an electron
m
t
*
0.067m
o
Effective mass—heavy holes
m
hh
*
0.45m
o
Effective mass—light holes
m
h
*
0.082m
o
Effective mass—split-off band
m
sh
*
0.15m
o
Electron mobility
μ
n
1400
0.14
cm
2
/V ⋅ s
m
2
/V ⋅ s
Electron afnity
χ
4.07 eV
Energy bandgap E
g
1.42 eV
Energy of an optical phonon E
ph
0.034 eV
Hole mobility
μ
p
400
0.04
cm
2
/V ⋅ s
m
2
/V ⋅ s
Intrinsic carrier concentration n
i3
2.2 × 10
6
2.2 × 10
12
cm
−3
m
−3
Split-off band separation
Δ
0.34 eV
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