Nanoscale Semiconductor Memories

4	DRAM Technology Myoung Jin Lee

CONTENTS

4.1    Introduction to Dynamic Random Access Memory>

4.1.1    DRAM Cell

4.1.2    Sense Operation

4.2    Sensing Margin in DRAM

4.2.1    Definition of Sensing Margin

4.2.2    Noise Effect on the Sensing Margin

4.2.2.1    DRAM Cell Performance (Leakage and Current Drivability)

4.2.2.2    High-Performance DRAM Cell Structures

4.2.2.3    VTH Mismatch in BLSA

4.2.2.4    Sensing Noise in Accordance with Data Pattern

4.2.3    Relation between Refresh Time and Sensing Noise in Accordance with Data Pattern

4.2.4    How to Improve Sensing Margin

4.2.4.1    Offset Compensation Sense Amplifier

References

4.1    INTRODUCTION TO DYNAMIC RANDOM ACCESS MEMORY

Since its invention in the early 1960s, the metal oxide ...