Porous Silicon: From Formation to Applications: Optoelectronics, Microelectronics, and Energy Technology Applications, Volume Three

Chapter 7

Porous Silicon as Substrate for Epitaxial Films Growth

Eugene Chubenko, Sergey Redko, Alexey Dolgiy, Hanna Bandarenka, and Vitaly Bondarenko

7.1 Introduction

Porous silicon (PSi) remains crystalline even at high porosity (p ~90%) (Unagami and Seki 1978; Duttagupta and Fauchet 1997), allowing an epitaxial growth of films of various materials. Mechanical properties of PSi strongly depend on the porosity and can be controlled by the anodization regimes (Duttagupta and Fauchet 1997) to provide PSi buffer layers with specified characteristics for the epitaxial growth. The possibility of the Si homoepitaxy on PSi to form an intercomponent isolation in ICs was patented as early as 1972 by the Nippon Telephone and Telegraph Public Corporation ...