10.3. Insulated Gate Bipolar Transistor (IGBT)

The bipolar transistor was the only power transistor until the MOSFET came along in the 1970s. The bipolar transistor requires a high base current to turn-on and has relatively slow turn-off characteristics. In addition, the lowest attainable conduction-state voltage or conduction loss is governed by the collector–emitter saturation voltage VCE(SAT). However, the MOSFET is a voltage-controlled semiconductor device and not current controlled as the transistor. MOSFETs have a positive temperature coefficient, stopping thermal runaway. The conduction-state resistance has no theoretical limit and, consequently, conduction-state losses can be by far lower. The main disadvantage of the MOSFETs is that they ...

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