POWER ELECTRONICS HANDBOOK, 3rd Edition

5

Insulated Gate Bipolar Transistor

S. Abedinpour, Ph.D. and K. Shenai, Ph.D.

Department of Electrical Engineering and Computer Science, University of Illinois at Chicago, 851, South Morgan Street (M/C 154), Chicago, Illinois, USA

5.1 Introduction

5.2 Basic Structure and Operation

5.3 Static Characteristics

5.4 Dynamic Switching Characteristics

5.4.1 Turn-on Characteristics

5.4.2 Turn-off Characteristics

5.4.3 Latch-up of Parasitic Thyristor

5.5 IGBT Performance Parameters

5.6 Gate Drive Requirements

5.6.1 Conventional Gate Drives

5.6.2 New Gate Drive Circuits

5.6.3 Protection

5.7 Circuit Models

5.7.1 Input and Output Characteristics

5.7.2 Implementing the IGBT Model into a Circuit Simulator

   5.8 Applications Further Reading

5.1 Introduction ...