RF and Microwave Circuit and Component Design for Wireless Systems

Index

ABCD matrix, 200

Active antennas, 502

Active-aperture antenna subsystems, 405

Active device operation:

future trends, 70

GaAs MESFET, 49–54

heterojunction bipolar transistors, 61–70

heterojunction field-effect transistor (HFET), 55–61

power amplifiers, 415–418

Si bipolar transistor, 43–49

Active device technologies, types of, 37–42. See also Active device operation

Active feedback, 435

Adjacent channel power ratio (ACPR):

defined, 102

in power amplifier measurment, 465–466

power amplifiers, 409, 465–466

Advanced mobile phone service (AMPS), 10–11, 14

Advanced speech coding, 15

Air-filled lines, 127

Air hole radius, coaxial filters, 187, 189, 191

Airtime charges, Iridium satellite systems, 26

Air-wound coils, lumped inductors, 153

Alumina (Al₂O₃), 73, 77

Aluminum gallium arsenide (AlGaAs), 55–56, 62, 227

Aluminum nitride (AIN), 77

AM-AM responses, 435

Amplifier(s), see specific types of amplifiers

bias voltage, 360

cascaded, 92

dynamic range and, 93

low-noise figure, 87–88

power, see Power amplifiers

Amplitude, generally:

hybrid couplers, 337

waveguides, 144

Amplitude modulation (AM):

characteristics of, 395–396

noise, 99–100, 368, 387–388

power amplifiers, 412

Amplitude shift keying (ASK), 395, 398

AM-PM responses, 435

AM/QM analog system, 35

Analog cellular systems, 13–14

Analog cordless phones, 19–20

Analog modulation, 395–397

Analog receivers, sensitivity of, 88

Analog RF amplifier, 409

Angle modulation, 395

Antennas:

analysis, 478–479

arrays, 506–511

back radiation, ...