RF Circuits for 5G Applications

11FinFET Process Technology for RF and Millimeter Wave Applications

A. Theja¹*, Vikas A.¹, Meena Panchore¹ and Kanchan Cecil²*

¹Department of Electronics and Communication Engineering, National Institute of Technology Patna, Bihar, India

²Department of Electronics and Telecommunication Engineering, Jabalpur Engineering College, Jabalpur, Madhya Pradesh, India

Abstract

FinFETs are considered as a potential candidate for modern complementary-metal-oxide-semiconductor (CMOS) technology due to reduced short channel effects (SCEs) and better gate controllability over channel. However, with the downscaling of device dimensions, the RF performance at higher current levels is degraded. Therefore, in this chapter, we have presented the scaling effects on RF performance of Fin devices including the parasitic and noise components. This chapter also focused the impact of self-heating and temporal process variability on electrical performance of Fin devices.

Keywords: Fin, scaling, self-heating effect, RF performance, millimeter-wave (mmWave)

11.1 Evaluation of FinFET Technology

In planar CMOS transistors, the speed of the device has been increased due to scaling of device dimension. However, the device scaling at sub-micrometer deteriorates the electrical characteristic and affects the analog and RF performance at circuit level. Hence, FinFET is considered as a potential candidate to overcome the limitations of planar devices at sub-nanometer regime. This section briefly covers the limitations ...