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Semiconductor Devices: Physics and Technology, 3rd Edition
book

Semiconductor Devices: Physics and Technology, 3rd Edition

by Simon M. Sze, Ming-Kwei Lee
May 2012
Intermediate to advanced
592 pages
21h 7m
English
Wiley
Content preview from Semiconductor Devices: Physics and Technology, 3rd Edition

images Appendix H

Derivation of the Density of States in a Semiconductor

3-D Density of States

For a three dimensional (3-D) structure such as a bulk semiconductor, to calculate the electron and hole concentrations in the conduction and valence bands, respectively, we need to know the density of states, that is, the number of allowed energy states per unit energy per unit volume (i.e., in the unit of number of states/eV/cm3).

When electrons move back and forth along the x-direction in a semiconductor material, the movements can be described by standing-wave oscillations. The wavelength λ of a standing wave is related to the length of the semiconductor L by

images

where nx is an integer. The wavelength can be expressed by de Broglie hypothesis:

images

where h is the Planck's constant and px is the momentum in the x-direction. Substituting Eq. 2 into Eq. 1 gives

images

The incremental momentum dpx required for a unity increase in nx is

images

For a three-dimensional cube of side L, we have

The volume dpx dpy dpz in the ...

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