Index
Absorption efficiency, 447
Accelerated life testing, 327
Activation energy, 338
Adjacent channel leakage power (ACP), 401
Alloy barrier effect, 63
Alloy scattering, 21
Anderson and Crowell method, 295
Auger generation, 282
Auger recombination, 248, 298, 330
Avalanche breakdown, 282, 284–285, 306–307, 309
Avalanche effect, 297
Avalanche multiplication, 287, 288, 290, 293–294, 300, 308
Backward Euler method, 259
Bandgap narrowing, 11–13, 93, 162, 298, 350
Base ballasting resistor, 319, 320
Base conductivity modulation, 71
Base current reversal, 298
Base pushout, 71–72, 89–90, 119, 122, 297
Base transit time, 76, 80, 111–112, 120, 122, 124, 136, 144–147, 152, 161, 163, 166, 170, 214, 303, 435, 442, 446
Base width modulation effect, 2, 69, 71, 80, 109, 204, 218
Boltzmann statistics, 255
Boltzmann transport equation, 228, 232, 250
Bulk recombination, 54, 56, 103, 205
Carrier freeze-out, 80
Charge-control model, 191, 297
Charge-control relation, 191
Charge partitioning method, 265
Chemical vapor deposition (CVD), 14, 32, 34, 45, 158, 361
Coinwell–Weisskopf approximation, 234
Collapse loci, 312
Collector breadown voltage, 39, 123, 142, 149, 296, 300, 389
Collector efficiency, 2, 323, 396
Collector offset voltage, 67–69, 205–206
Collector signal delay, 114–115, 243
Collector space-charge-layer transit time, 112, 120, 123, 152, 170, 303, 387
Collector space-charge-region widening, ...
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