Silicon-on-insulator (SOI) fin-on-oxide field effect transistors (FinFETs)
B. Cheng, University of Glasgow, UK
A. Brown, Gold Standard Simulations Ltd, UK
E. Towie, University of Glasgow, UK
N. Daval, K.K. Bourdelle and B-Y. Nguyen, Soitec, France
A. Asenov, University of Glasgow and Gold Standard Simulations Ltd, UK
Abstract:
New device architectures, such as FinFETs, are required at the nanometer regime for the continuity of complementary metal-oxide semiconductor (CMOS) scaling. Using bulk FinFETs as a reference technology, this chapter evaluates the performance and variability aspects of SOI FinFETs. The results indicate that due to the BOX isolation instead of the junction isolation, SOI FinFETs can have a considerable advantage ...
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