Silicon-on-insulator (SOI) metal oxide semiconductor field effect transistors (MOSFETs) for radio frequency (RF) and analogue applications

J.-P. Raskin,    Université catholique de Louvain (UCL), Belgium

M. Emam,    Incize, Belgium


During the last decade, silicon-on-insulator (SOI) metal oxide semiconductor field effect transistor (MOSFET) technology has demonstrated its high frequency potential, reaching cut-off frequencies close to 500 GHz, and its suitability for commercial applications in harsh environments. For high-speed and radio frequency (RF) applications, strained Si and high-resistivity Si can be considered, respectively, to enhance carrier mobility and thus current and operation speed, and to minimize the RF substrate losses. ...

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