Index
Note: Page numbers in italics refer to Figures; those in bold to Tables
absorption
energy level transition processes
excitonic
free-carrier
fundamental (interband)
intervalence band
related to semiconductor material
direct gap
indirect gap
spectra
two-photon
absorption coefficients
wavelength dependence
add-drop multiplexers (ADM)
alloys
band structure engineering
mixed-alloy supercell model
properties and band structures
amorphous silicon
amplified spontaneous emission (ASE)
amplifiers
annealing
hydrogen (for heteroepitaxy)
rapid thermal, in ion implantation
antireflection coatings
arrayed waveguide gratings (AWGs)
applications
characteristics
materials
performance improvement methods
structure and principles
use of thermo-optic effect
attenuation see loss mechanisms, waveguides
attenuators
Auger recombination process
avalanche photodiodes (APDs)
band alignment
Ge-alloy heterostructures
edge shifts
multiple QWs
shifts and splitting, strain-induced
in silicon-based QW structures
type classes, in heterojunctions
band structure
effects of alloying
Fermi occupational probabilities
indirect and direct gap semiconductors
minibands (coupled wells)
modification under strain
near conduction/valence band edges
temperature- and pressure-dependence
see also subband structures
band structure parameters
band theory
bandwidth
arrayed waveguide gratings
high-bandwidth modulators
related to noise
time constant limitation, photodetectors
barrier layers, quantum wells
beam propagation method ...
