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Solid State Electronic Devices, 7th Edition
book

Solid State Electronic Devices, 7th Edition

by Ben Streetman, Sanjay Banerjee
March 2014
Intermediate to advanced content levelIntermediate to advanced
624 pages
26h 33m
English
Pearson
Content preview from Solid State Electronic Devices, 7th Edition

7.3 BJT Fabrication

The first transistor invented by Bardeen and Brattain in 1947 was the point contact transistor. In this device two sharp metal wires, or “cat’s whiskers,” formed an “emitter” of carriers and a “collector” of carriers. These wires were simply pressed onto a slab of Ge which provided a “base” or mechanical support, through which the injected carriers flowed. This basic invention rapidly led to the BJT, in which charge injection and collection was achieved using two p-n junctions in proximity to each other. The p-n junctions in BJTs can be formed in a variety of ways using thermal diffusion, but modern devices are generally made using ion implantation (Section 5.1.4).

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Publisher Resources

ISBN: 9780137577866