Solid State Electronic Devices, 7th Edition

Problems

1. 10.1 Sketch the band diagram for an abrupt junction in which the doping on the p side is degenerate and the Fermi level on the n side is aligned with the bottom of the conduction band. Draw the forward- and reverse-bias band diagrams and sketch the I–V characteristic. This diode is often called a backward diode. Can you explain why?

2. 10.2 What determines the peak tunneling voltage V_p of a tunnel diode? Explain.

   If a large density of trapping centers is present in a tunnel diode (Fig. P10–2), tunneling can occur from the n-side conduction band to the trapping level (A–B). Then the electrons may drop to the valence band on the p side (B–C), thereby completing a two-step process of charge transport across the junction. In fact, if the ...