Book description
A practical and comprehensive reference that explores Electrostatic Discharge (ESD) in semiconductor components and electronic systems
The ESD Handbook offers a comprehensive reference that explores topics relevant to ESD design in semiconductor components and explores ESD in various systems. Electrostatic discharge is a common problem in the semiconductor environment and this reference fills a gap in the literature by discussing ESD protection. Written by a noted expert on the topic, the text offers a topic-by-topic reference that includes illustrative figures, discussions, and drawings.
The handbook covers a wide-range of topics including ESD in manufacturing (garments, wrist straps, and shoes); ESD Testing; ESD device physics; ESD semiconductor process effects; ESD failure mechanisms; ESD circuits in different technologies (CMOS, Bipolar, etc.); ESD circuit types (Pin, Power, Pin-to-Pin, etc.); and much more. In addition, the text includes a glossary, index, tables, illustrations, and a variety of case studies.
- Contains a well-organized reference that provides a quick review on a range of ESD topics
- Fills the gap in the current literature by providing information from purely scientific and physical aspects to practical applications
- Offers information in clear and accessible terms
- Written by the accomplished author of the popular ESD book series
Written for technicians, operators, engineers, circuit designers, and failure analysis engineers, The ESD Handbook contains an accessible reference to ESD design and ESD systems.
Table of contents
- Cover
- Title Page
- Copyright
- Dedication
- About the Author
- Acknowledgements
-
1 ESD, EOS, EMI, EMC, and Latchup
- 1.1 Electrostatic Discharge (ESD)
- 1.2 Human Body Model (HBM)
- 1.3 Machine Model (MM)
- 1.4 Cassette Model
- 1.5 Charged Device Model (CDM)
- 1.6 Transmission Line Pulse (TLP)
- 1.7 Very Fast Transmission Line Pulse (VF-TLP)
- 1.8 Electrical Overstress (EOS)
- 1.9 Electrical Overstress (EOS)
- 1.10 EOS Sources – Lightning
- 1.11 EOS Sources – Electromagnetic Pulse (EMP)
- 1.12 EOS Sources – Machinery
- 1.13 EOS Sources – Power Distribution
- 1.14 EOS Sources – Switches, Relays, and Coils
- 1.15 EOS Design Flow and Product Definition
- 1.16 EOS Sources – Design Issues
- 1.17 Electromagnetic Interference (EMI)
- 1.18 Electromagnetic Compatibility (EMC)
- 1.19 Latchup
- Questions and Answers
- 1.20 Summary and Closing Comments
- References
-
2 ESD in Manufacturing
- 2.1 Flooring
- 2.2 Work Surfaces
- 2.3 Garments
- 2.4 Wrist Straps
- 2.5 Shoes – Footwear
- 2.6 Ionization
- 2.7 Clean Rooms
- 2.8 Carts
- 2.9 Shipping Tubes
- 2.10 Trays
- 2.11 Measurements
- 2.12 Verification
- 2.13 Audit
- 2.14 Triboelectric Charging – How Does it Happen?
- 2.15 Conductors, Semiconductors, and Insulators
- 2.16 Static Dissipative Materials
- 2.17 ESD and Materials
- 2.18 Electrification and Coulomb’s Law
- 2.19 Electromagnetism and Electrodynamics
- 2.20 Electrical Breakdown
- 2.21 Electro-Quasistatics and Magnetoquasistatics
- 2.22 Electrodynamics and Maxwell’s Equations
- 2.23 Electrostatic Discharge (ESD)
- 2.24 Electromagnetic Compatibility (EMC)
- 2.25 Electromagnetic Interference (EMI)
- 2.26 Fundamentals of Manufacturing and Electrostatics
- 2.27 Materials, Tooling, Human Factors, and Electrostatic Discharge
- 2.28 Materials and Human-induced Electric Fields
- 2.29 Manufacturing Environment and Tooling
- 2.30 Manufacturing Equipment and ESD Manufacturing Problems
- 2.31 Manufacturing Materials
- 2.32 Measurement and Test Equipment
- 2.33 Manufacturing Testing for Compliance
- 2.34 Grounding and Bonding Systems
- 2.35 Work Surfaces
- 2.36 Wrist Straps
- 2.37 Constant Monitors
- 2.38 Footwear
- 2.39 Floors
- 2.40 Personnel Grounding with Garments
- 2.41 Garments
- 2.42 Air Ionization
- 2.43 Seating
- 2.44 Packaging and Shipping
- 2.45 Trays
- 2.46 ESD Identification
- 2.47 ESD Program Auditing
- 2.48 ESD On-Chip Protection
- 2.49 ESD, EOS, EMI, EMC, and Latchup
- 2.50 Manufacturing Electrical Overstress (EOS)
- 2.51 EMI
- 2.52 EMC
- 2.53 Summary and Closing Comments
- References
- 3 ESD Standards
-
4 ESD Testing
- 4.1 Electrostatic Discharge (ESD) Testing
- 4.2 ESD Models
- 4.3 HBM Test System
- 4.4 HBM Two-pin Test System
- 4.5 Machine Model (MM)
- 4.6 Small Charge Model (SCM)
- 4.7 Small Charge Model Source
- 4.8 CDM Pulse Waveform
- 4.9 HMM Equivalent Circuit
- 4.10 HMM Test Equipment
- 4.11 HMM Test Configuration
- 4.12 HMM Fixture Board
- 4.13 Transmission Line Pulse (TLP)
- 4.14 TLP Test Systems
- 4.15 IEC 61000-4-2
- 4.16 Equivalent Circuit
- 4.17 Test Equipment
- 4.18 Cable Discharge Event (CDE)
- 4.19 CDE Pulse Waveform
- 4.20 Equivalent Circuit
- 4.21 Commercial Test Systems
- 4.22 Systems Electromagnetic Interference (EMI)
- 4.23 Electromagnetic Compatibility (EMC)
- 4.24 Electrical Overstress (EOS)
- 4.25 Latchup
- 4.26 Electrical Overstress (EOS)
- 4.27 EOS Sources – Lightning
- 4.28 EOS Sources – Electromagnetic Pulse (EMP)
- 4.29 Electromagnetic Compatibility
- 4.30 Summary and Closing Comments
- References
-
5 ESD Device Physics
- 5.1 Electro-thermal Instability
- 5.2 Stable System
- 5.3 Unstable System
- 5.4 Differential Relation of Voltage and Current
- 5.5 Time Constant Hierarchy
- 5.6 Thermal Physics Time Constants
- 5.7 Adiabatic, Thermal Diffusion Time Scale and Steady State
- 5.8 Electro-quasistatic and Magnetoquasistatics
- 5.9 Electrical Instability
- 5.10 Thermal Physics Time Constants
- 5.11 Adiabatic, Thermal Diffusion Time Scale and Steady State
- 5.12 Electrical Instability and Breakdown
- 5.13 Spatial Instability and Electro-thermal Current Constriction
- 5.14 Equipotential Surface
- 5.15 Heat Flow
- 5.16 Conservation of Heat
- 5.17 Electric Potential and Temperature Gradient
- 5.18 Electric Energy, Resistivity, and Thermal Conductivity
- 5.19 Breakdown
- 5.20 Electron Current Continuity Relationship
- 5.21 Air Breakdown and Peak Currents
- 5.22 Electro-thermal Instability
- 5.23 Mathematical Methods – Green’s Function and Method of Images
- 5.24 Mathematical Methods – Green’s Function and Method of Images
- 5.25 Mathematical Methods – Integral Transforms of the Heat Conduction Equation
- 5.26 Flux Potential Transfer Relations Matrix Methodology
- 5.27 Heat Equation Variable Conductivity
- 5.28 Mathematical Methods – Boltzmann Transformation
- 5.29 Mathematical Methods – The Duhamel Formulation
- 5.30 Spherical Source Tasca Model
- 5.31 Wunsch–Bell Model
- 5.32 The Smith and Littau Model
- 5.33 The Arkihpov–Astvatsaturyan–Godovosyn–Rudenko Model
- 5.34 The Vlasov–Sinkevitch Model
- 5.35 The Dwyer, Franklin and Campbell Model
- 5.36 Negative Differential Resistor and Resistor Ballasting
- 5.37 Ash Model – Nonlinear Failure Power Thresholds
- 5.38 Statistical Models for ESD Prediction
- 5.39 Summary and Closing Comments
- References
- 6 ESD Events and Protection Circuits
-
7 ESD Failure Mechanism
- 7.1 Tables of CMOS ESD Failure Mechanisms
- 7.2 LOCOS Isolation-Defined CMOS
- 7.3 LOCOS-bound Thick Oxide MOSFET
- 7.4 LOCOS-Bound Structures
- 7.5 Shallow Trench Isolation (STI)
- 7.6 STI Pull-down ESD Failure Mechanism
- 7.7 STI Pull-Down and Gate Wrap-Around
- 7.8 MOSFETs
- 7.9 LOCOS-bound Thick Oxide MOSFET
- 7.10 Bipolar Transistor Devices
- 7.11 Silicide Blocked N-diffusion Resistors
- 7.12 Silicon Germanium ESD Failure Mechanisms
- 7.13 Silicon Germanium Carbon ESD Failure Mechanisms
- 7.14 Gallium Arsenide Technology ESD Failure Mechanisms
- 7.15 Indium Gallium Arsenide ESD Failure Mechanisms
- 7.16 Micro Electromechanical (MEM) Systems
- 7.17 Micro-mirror Array Failures
- 7.18 EOS Bond Pad and Interconnect Failure
- 7.19 Summary and Closing Comments
- References
-
8 ESD Design Synthesis
- 8.1 ESD Design Synthesis and Architecture Flow
- 8.2 ESD Design – the Signal Path and the Alternate Current Path
- 8.3 ESD Electrical Circuit and Schematic Architecture Concepts
- 8.4 The Ideal ESD Network
- 8.5 Mapping Semiconductor Chips and ESD Designs
- 8.6 Mapping across Semiconductor Fabricators
- 8.7 ESD Design Mapping across Technology Generations
- 8.8 ESD Networks, Sequencing, and Chip Architecture
- 8.9 ESD Layout and Floorplan-related Concepts
- 8.10 ESD Architecture and Floor-planning
- 8.11 Digital and Analog CMOS Architecture
- 8.12 Digital and Analog Floorplan – Placement of Analog Circuits
- 8.13 Mixed-signal Architecture – Digital, Analog, and RF Architecture
- 8.14 Summary and Closing Comments
- Questions
- References
-
9 On-chip ESD Protection Circuits – Input Circuitry
- 9.1 Receivers and ESD
- 9.2 Receivers and Receiver Delay Time
- 9.3 ESD Loading Effect on Receiver Performance
- 9.4 Receivers and HBM
- 9.5 Receivers and CDM
- 9.6 Receivers and Receiver Evolution
- 9.7 Receiver Circuits with Half-pass Transmission Gate
- 9.8 Receiver with Full-pass Transmission Gate
- 9.9 Receiver, Half-pass Transmission Gate, and Keeper Network
- 9.10 Receiver, Half-pass Transmission Gate, and the Modified Keeper Network
- 9.11 Receiver Circuits with Pseudo-zero VT Half-pass Transmission Gates
- 9.12 Receiver with Zero VT Transmission Gate
- 9.13 Receiver Circuits with Bleed Transistors
- 9.14 Receiver Circuits with Test Functions
- 9.15 Receiver with Schmitt Trigger Feedback Network
- 9.16 Bipolar Transistor Receivers
- 9.17 CMOS Differential Receiver with Analog Layout Concepts
- 9.18 CMOS Differential Receiver Capacitance Loading
- 9.19 CMOS Differential Receiver ESD Mismatch
- 9.20 Analog Differential Pair ESD Signal Pin Matching with Common Well Layout
- 9.21 Analog Differential Pair Common Centroid Design Layout – Signal-Pin to Signal-Pin and Parasitic ESD Elements
- 9.22 Off-chip Drivers (OCD)
- 9.23 Off-chip Driver I/O Standards and ESD
- 9.24 Off-chip Driver (OCD) ESD Design Basics
- 9.25 Off-chip Drivers (OCD): Mixed Voltage Interface
- 9.26 Off-chip Drivers (OCD): Self-bias Well OCD Networks
- 9.27 Self-bias Well Off-chip Driver (OCD) Networks
- 9.28 ESD Protection Networks for Self-bias Well OCD Networks
- 9.29 Programmable Impedance Off-chip Driver (OCD) Network
- 9.30 ESD Input Protection Networks for Programmable Impedance Off-chip Drivers
- 9.31 Universal Off-chip Drivers
- 9.32 Gate Array Off-chip Driver Design
- 9.33 Gate Array OCD Design – Impedance Matching of Unused Elements
- 9.34 OCD ESD Design – Power Rails Over Multi-finger MOSFETs
- 9.35 Off-chip Driver: Gate-modulated MOSFET ESD Network
- 9.36 Off-chip Driver Simplified Gate Modulated Network
- 9.37 Off-chip Drivers ESD Design: Integration of Coupling and Ballasting Techniques
- 9.38 Ballasting and Coupling
- 9.39 MOSFET Source-initiated Gate-bootstrapped Resistor Ballasted Multi-finger MOSFET with Diode
- 9.40 MOSFET Source-initiated Gate-bootstrapped Resistor Ballasted Multi-finger MOSFET with a MOSFET
- 9.41 Gate-coupled Domino Resistor-ballasted MOSFET
- 9.42 Substrate-modulated Resistor Ballasted MOSFET
- 9.43 Summary and Closing Comments
- Problems
- References
-
10 On-Chip ESD Protection Circuits – ESD Power Clamps
- 10.1 ESD Power Clamps
- 10.2 ESD Power Clamp Design Practices
- 10.3 Current Loops
- 10.4 Impedance
- 10.5 Segmentation
- 10.6 Voltage Limitations
- 10.7 Latchup
- 10.8 ESD Power Clamp Circuits
- 10.9 Classification of ESD Power Clamps
- 10.10 Master-Slave ESD Power Clamps
- 10.11 Trigger Networks
- 10.12 ESD Power Clamp Characteristics and Issues
- 10.13 Design Synthesis of ESD Power Clamp – Key Design Parameters
- 10.14 Design Synthesis of ESD Power Clamps Trigger Networks
- 10.15 Transient Response Frequency Trigger Element and the ESD Frequency Window
- 10.16 ESD Power Clamp Frequency Design Window
- 10.17 Design Synthesis of ESD Power Clamp – Voltage Triggered ESD Trigger Elements
- 10.18 Design Synthesis of ESD Power Clamp – The ESD Power Clamp Shunting Element
- 10.19 ESD Power Clamp Trigger Condition vs. Shunt Failure
- 10.20 ESD Clamp Element – Width Scaling
- 10.21 ESD Clamp Element – On-resistance
- 10.22 ESD Clamp Element – Safe Operating Area (SOA)
- 10.23 ESD Power Clamp Issues
- 10.24 ESD Power Clamp Issues – Power-up and Power-down
- 10.25 ESD Power Clamp Issues – False Triggering
- 10.26 ESD Power Clamp Issues – Pre-charging
- 10.27 ESD Power Clamp Issues – Post-charging
- 10.28 ESD Power Clamp Design
- 10.29 ESD Power Clamp Design Synthesis – Forward Bias Triggered ESD Power Clamps
- 10.30 Series Stacked RC-triggered ESD Power Clamps
- 10.31 Triple Well Diode String ESD Power Clamp
- 10.32 Bipolar ESD Power Clamps
- 10.33 ESD Power Clamp Design Synthesis – Bipolar ESD Power Clamps
- 10.34 Bipolar ESD Power Clamps with Frequency Trigger Elements: Capacitance-triggered
- 10.35 Silicon Controlled Rectifier Power Clamps
- Problems
- References
-
11 ESD Architecture and Floor Planning
- 11.1 ESD Design Floor Plan
- 11.2 Peripheral I/O Design
- 11.3 Pad Limited Peripheral I/O Design Architecture
- 11.4 Pad Limited Peripheral I/O Design Architecture – Staggered I/O
- 11.5 Core Limited Peripheral I/O Design Architecture
- 11.6 Lumped ESD Power Clamp in Peripheral I/O Design Architecture
- 11.7 Lumped ESD Power Clamp in Peripheral I/O Design Architecture in the Semiconductor Chip Corners
- 11.8 Lumped ESD Power Clamp in Peripheral I/O Design Architecture – Power Pads
- 11.9 Lumped ESD Power Clamp in Peripheral I/O Design Architecture – Master/Slave ESD Power Clamp System
- 11.10 Array I/O
- 11.11 Array I/O Nibble Architecture
- 11.12 Array I/O Pair Architecture
- 11.13 Array I/O – Fully Distributed
- 11.14 ESD Architecture – Dummy Bus Architecture
- 11.15 ESD Architecture – Dummy VDD Bus
- 11.16 ESD Architecture – Dummy Ground (VSS) Bus
- 11.17 Native Voltage Power Supply Architecture
- 11.18 Single Power Supply Architecture
- 11.19 Mixed Voltage Architecture
- 11.20 Mixed Voltage Architecture – Single Power Supply
- 11.21 Mixed Voltage Architecture – Dual Power Supply
- 11.22 Mixed Signal Architecture
- 11.23 Digital and Analog Floor Plan – Placement of Analog Circuits
- 11.24 Mixed Signal Architecture – Digital, Analog, and RF Architecture
- 11.25 ESD Power Grid Design
- 11.26 I/O to Core Guard Rings
- 11.27 Within I/O Guard Rings
- 11.28 ESD-to-I/O Off-Chip Driver (OCD) Guard Ring
- 11.29 Guard Rings and Computer Aided Design (CAD) Methods
- 11.30 Summary and Closing Comments
- References
-
12 ESD Digital Design
- 12.1 Fundamental Concepts of ESD Design
- 12.2 Concepts of ESD Digital Design
- 12.3 Device Response to External Events
- 12.4 Alternative Current Loops
- 12.5 Decoupling of Feedback Loops
- 12.6 Decoupling of Power Rails
- 12.7 Local and Global Distribution
- 12.8 Usage of Parasitic Elements
- 12.9 Unused Section of a Semiconductor Device, Circuit, or Chip Function
- 12.10 Unused Corners
- 12.11 Unused White Space
- 12.12 Impedance Matching Between Floating and Non-floating Networks
- 12.13 Unconnected Structures
- 12.14 Symmetry
- 12.15 Design Synthesis
- 12.16 ESD, Latchup, and Noise
- 12.17 Structures Under Bond Pads
- 12.18 Summary and Closing Comments
- References
-
13 ESD Analog Design
- 13.1 Analog Design: Local Matching
- 13.2 Analog Design: Global Matching
- 13.3 Symmetry
- 13.4 Analog Design – Local Matching
- 13.5 Analog Design – Global Matching
- 13.6 Common Centroid Design
- 13.7 Common Centroid Arrays
- 13.8 Interdigitation Design
- 13.9 Common Centroid and Interdigitation Design
- 13.10 Dummy Resistor Layout
- 13.11 Thermoelectric Cancelation Layout
- 13.12 Electrostatic Shield
- 13.13 Interdigitated Resistors and ESD Parasitics
- 13.14 Capacitor Element Design
- 13.15 Inductor Element Design
- 13.16 ESD Failure in Inductors
- 13.17 Inductor Physical Variables
- 13.18 Inductor Element Design
- 13.19 Diode Design
- 13.20 Analog ESD Circuits
- 13.21 ESD MOSFETs
- 13.22 Receivers
- 13.23 CMOS Differential Receiver with Analog Layout Concepts
- 13.24 Analog Differential Pair Common Centroid Design Layout – Signal-pin to Signal-pin and Parasitic ESD Elements
- 13.25 Summary and Closing Comments
- References
-
14 ESD RF Design
- 14.1 Fundamental Concepts of ESD Design
- 14.2 Fundamental Concepts of RF ESD Design
- 14.3 RF CMOS Input Circuits
- 14.4 RF CMOS Impedance Isolation LC Resonator ESD Networks
- 14.5 RF CMOS LC-diode Networks Experimental Results
- 14.6 RF CMOS LNA ESD Design – Low Resistance ESD Inductor and ESD Diode Clamping Elements in Π-configuration
- 14.7 RF CMOS T-coil Inductor ESD Input Network
- 14.8 RF CMOS Distributed ESD Networks
- 14.9 RF CMOS Distributed ESD-RF Networks
- 14.10 RF CMOS Distributed RF-ESD Networks Using Series Inductors and Dual-diode Shunts
- 14.11 RF CMOS Distributed RF-ESD Networks Using Series Inductors and MOSFET Parallel Shunts
- 14.12 RF CMOS Distributed ESD Networks – Transmission Lines and Co-planar Waveguides
- 14.13 RF CMOS – ESD and RF LDMOS Power Technology
- 14.14 Summary and Closing Comments
- References
- 15 ESD Power Electronics Design
-
16 ESD in Advanced CMOS
- 16.1 Interconnects and ESD
- 16.2 Aluminum Interconnects
- 16.3 Interconnects – Vias
- 16.4 Interconnects – Wiring
- 16.5 Junctions
- 16.6 Titanium Silicide
- 16.7 Shallow Trench Isolation
- 16.8 LOCOS-bound ESD Structures
- 16.9 LOCOS-bound p+/n-well Junction Diodes
- 16.10 LOCOS-bound n+ Junction Diodes
- 16.11 LOCOS-bound n-well/Substrate Diodes
- 16.12 LOCOS-bound Lateral N-Well to N-Well Bipolar ESD Element
- 16.13 LOCOS-bound Lateral N+ to N-well Bipolar ESD Element
- 16.14 LOCOS-bound Lateral pnp Bipolar ESD Element
- 16.15 LOCOS-bound Thick Oxide MOSFET ESD Element
- 16.16 Shallow Trench Isolation
- 16.17 STI-bound ESD Structures
- 16.18 Substrate Modeling – Electrical and Thermal Discretization
- 16.19 Heavily Doped Substrates
- 16.20 Retrograde Wells and ESD Scaling
- 16.21 Triple Well and Isolated MOSFET CMOS
- 16.22 Summary and Closing Comments
- References
-
17 ESD in Silicon on Insulator
- 17.1 Silicon on Insulator (SOI) Technologies
- 17.2 Elimination of CMOS Latchup
- 17.3 Lack of Vertical Bipolar Transistors
- 17.4 Floating Gate Tie Downs
- 17.5 Physical Separation of MOSFETs from the Bulk Substrate
- 17.6 SOI ESD Design Fundamental Concepts
- 17.7 SOI Lateral Diode Structure
- 17.8 Transistors – Bulk versus SOI Technology
- 17.9 SOI Buried Resistors (BR) Elements
- 17.10 Dynamic Threshold MOS (DTMOS) SOI MOSFET
- 17.11 SOI P+ Body Contact Abutting n+ Drain
- 17.12 Transmission Line Pulse (TLP) Testing of SOI Diode Designs
- 17.13 SOI ESD with MOSFET Drain and Body Width Ratio Variation
- 17.14 SOI Dual-Gate MOSFET Structure
- 17.15 SOI ESD Design – Mixed Voltage T-Shape Layout Style
- 17.16 SOI ESD Design: Double Diode Network
- 17.17 Bulk to SOI ESD Design Remapping
- 17.18 SOI ESD Diode Design Parameters
- 17.19 SOI ESD Design in Mixed Voltage Interface Environments
- 17.20 Comparison of Bulk with SOI ESD Results
- 17.21 SOI ESD Design with Aluminum Interconnects
- 17.22 SOI ESD Design with Copper Interconnects
- 17.23 SOI ESD Design with Gate Circuitry
- 17.24 Summary and Closing Comments
- References
-
18 ESD in Analog Circuits
- 18.1 Analog Design Circuits
- 18.2 Single-ended Receivers
- 18.3 Schmitt Trigger Receivers
- 18.4 Differential Receivers
- 18.5 Comparators
- 18.6 Current Sources
- 18.7 Current Mirrors
- 18.8 Widlar Current Mirror
- 18.9 Wilson Current Mirror
- 18.10 Voltage Regulators
- 18.11 Buck Converters
- 18.12 Boost Converters
- 18.13 Buck-Boost Converters
- 18.14 Cuk Converters
- 18.15 Voltage Reference Circuits
- 18.16 Brokaw Bandgap Voltage Reference
- 18.17 Converters
- 18.18 Analog-to-Digital Converter (ADC)
- 18.19 Digital-to-Analog Converters (DAC)
- 18.20 Oscillators
- 18.21 Phase Lock Loop (PLL) Circuits
- 18.22 Delay Locked Loop (DLL)
- 18.23 Analog and ESD Design Synthesis
- 18.24 Analog Chip Architecture – Separation of Analog Power from Digital Power, AVDD–DVDD
- 18.25 ESD Failure in Phase Lock Loop (PLL) and System Clock
- 18.26 ESD Failure in Current Mirrors
- 18.27 ESD Failure in Schmitt Trigger Receivers
- 18.28 ESD Design Practice – Prevent ESD Failure in Schmitt Trigger
- 18.29 Analog–Digital Architecture: Isolated Digital and Analog Domains
- 18.30 ESD Protection Solution – Connectivity of AVDD-to-VDD
- 18.31 ESD Solution: Connectivity of AVSS-to-DVSS
- 18.32 Digital and Analog Domain with ESD Power Clamps
- 18.33 Digital and Analog Domain with Master–Slave ESD Power Clamps
- 18.34 High Voltage, Digital, and Analog Domain Floorplan
- 18.35 Floor-planning of Digital and Analog
- 18.36 Inter-domain Signal Lines ESD Failures
- 18.37 Digital-to-Analog Signal Line ESD Failures
- 18.38 Digital-to-Analog Core Spatial Isolation
- 18.39 Digital-to-Analog Core Ground Coupling
- 18.40 Digital-to-Analog Core Resistive Ground Coupling
- 18.41 Digital-to-Analog Core Diode Ground Coupling
- 18.42 Domain-to-Domain Signal Line ESD Networks
- 18.43 Domain-to-Domain Third-party Coupling Networks
- 18.44 Domain-to-Domain Cross-domain ESD Power Clamp
- 18.45 Digital-to-Analog Domain Moat
- 18.46 Analog and ESD Circuit Integration
- 18.47 Integrated Body Ties
- 18.48 Self-Protecting vs Non-self Protecting Designs
- References
-
19 ESD in RF CMOS
- 19.1 CMOS and ESD
- 19.2 RF CMOS
- 19.3 RF CMOS and ESD
- 19.4 RF CMOS ESD Failure Mechanisms
- 19.5 RF CMOS – ESD Device Comparisons
- 19.6 RF ESD Metrics
- 19.7 Grounded Gate n-channel MOSFET versus STI Diode
- 19.8 Silicon-controlled Rectifier
- 19.9 SCR versus GGNMOS
- 19.10 Shallow Trench Isolation and Polysilicon Gated Diodes
- 19.11 RF ESD Design
- 19.12 RF ESD Design Layout – Circular RF ESD Devices
- 19.13 Disadvantage of RF ESD Circular Element
- 19.14 RF ESD Design – ESD Wiring Design
- 19.15 RF ESD Design – Loading Capacitance
- 19.16 Metal Capacitance
- 19.17 Analog Metal (AM)
- 19.18 RF ESD Design Practices
- 19.19 RF Passives – ESD and Schottky Barrier Diodes
- 19.20 Schottky Barrier Diodes and Metallurgy
- 19.21 Silicon Germanium Schottky Barrier Diodes
- 19.22 Schottky Barrier RF ESD Design Practice
- 19.23 RF Passives – ESD and Inductors
- 19.24 Quality Factor, Q
- 19.25 Incremental Model of an Inductor
- 19.26 Inductor Coil Parameters
- 19.27 RF Passives – ESD and Capacitors
- 19.28 Capacitors and RF Applications
- 19.29 Capacitors in ESD Networks
- 19.30 Types of Radio Frequency Capacitors
- 19.31 Metal-Oxide-Semiconductor and Metal-Insulator-Metal Capacitors
- 19.32 Varactors and Hyper-abrupt Junction Varactor Capacitors
- 19.33 Metal-ILD-Metal Capacitors
- 19.34 Vertical Parallel Plate (VPP) Capacitors
- 19.35 Tips: ESD RF Design Practices for Capacitors
- 19.36 Summary and Closing Comments
- Problems
- References
-
20 ESD in Silicon Germanium
- 20.1 Heterojunctions Bipolar Transistors
- 20.2 Silicon Germanium
- 20.3 Silicon Germanium HBT Devices
- 20.4 Silicon Germanium Device Structure
- 20.5 Silicon Germanium Film Deposition
- 20.6 Silicon Germanium Emitter–Base Region
- 20.7 Silicon Germanium Physics
- 20.8 Silicon Germanium Bandgap
- 20.9 Silicon Germanium Intrinsic Temperature
- 20.10 Position-dependent Silicon Germanium Profile
- 20.11 Position-dependent Intrinsic Temperature
- 20.12 SiGe Collector Current with Graded Germanium Concentration
- 20.13 Silicon Germanium ESD and Time Constants
- 20.14 Silicon Germanium Base Transit Time
- 20.15 Silicon Germanium Breakdown Voltages
- 20.16 Silicon Germanium ESD Measurements
- 20.17 Silicon Germanium Collector-to-Emitter ESD Stress
- 20.18 Transmission Line Pulse Testing of Silicon Germanium HBT
- 20.19 Transmission Line Pulse (TLP) I-V Characteristic
- 20.20 Wunsch–Bell Characteristic of Silicon Germanium HBT
- 20.21 Comparison of Silicon Germanium HBT and Silicon BJT
- 20.22 Wunsch–Bell Characteristic of SiGe HBT versus Si BJT
- 20.23 Intrinsic Base Resistance in SiGe HBT
- 20.24 SiGe HBT Electro-thermal HBM Simulation of Collector–Emitter Stress
- 20.25 Silicon Germanium Transistor Emitter–Base Design
- 20.26 Epitaxial-Base Hetero-Junction Bipolar Transistor (HBT) Emitter–Base Design
- 20.27 Self-aligned Silicon Germanium HBT Device
- 20.28 Non-Self Aligned Silicon Germanium HBT
- 20.29 Emitter–Base Design RF Frequency Performance Metrics
- 20.30 SiGe HBT Emitter–Base Resistance Model
- 20.31 SiGe HBT Emitter–Base Design and Silicide Placement
- 20.32 Silicide Material and ESD
- 20.33 Titanium Silicide and ESD
- 20.34 Cobalt Salicide
- 20.35 Self-aligned (SA) Emitter Base Design
- 20.36 Non-Self Aligned (NSA) Emitter Base Design
- 20.37 Non-Self Aligned HBT Human Body Model (HBM) Step Stress
- 20.38 Transmission Line Pulse (TLP) Step Stress
- 20.39 RF Testing of SiGe HBT Emitter–Base Configuration
- 20.40 Unity Current Gain Cutoff Frequency – Collector Current Plots
- 20.41 fMAX and fT
- 20.42 Electrothermal Simulation of Emitter–Base Stress
- 20.43 Field-Oxide (FOX) Isolation Defined Silicon Germanium Heterojunction Bipolar Transistor HBM Data
- 20.44 Silicon Germanium HBT Multiple-emitter Study
- 20.45 RF ESD Design Practice
- 20.46 Silicon Germanium ESD Failure Mechanisms
- 20.47 Summary and Closing Comments
- References
-
21 ESD in Silicon Germanium Carbon
- 21.1 Heterojunctions and Silicon Germanium Carbon Technology
- 21.2 Silicon Germanium Carbon
- 21.3 Silicon Germanium Carbon Collector–Emitter ESD Measurements
- 21.4 Silicon Germanium Transistor Emitter–Base Design
- 21.5 Silicon Germanium Carbon – ESD-Induced S-Parameter Degradation
- 21.6 Silicon Germanium Carbon ESD Failure Mechanisms
- 21.7 Summary and Closing Comments
- References
-
22 ESD in GaAs
- 22.1 Gallium Arsenide Technology and ESD
- 22.2 Gallium Arsenide Energy-to-Failure, and Power-to-Failure
- 22.3 Gallium Arsenide ESD Failures in Active and Passive Elements
- 22.4 Gallium Arsenide HBT Devices and ESD
- 22.5 Gallium Arsenide HBT Device ESD Results
- 22.6 Gallium Arsenide HBT Diode Strings
- 22.7 Gallium Arsenide HBT-based Passive Elements
- 22.8 GaAs HBT Base–Collector Varactor
- 22.9 Gallium Arsenide Technology Table of Failure Mechanisms
- 22.10 Application – GaAs Power Amplifier in a Cell Phone
- 22.11 Summary and Closing Comments
- Questions
- References
- 23 ESD in Bulk and SOI FINFET
- 24 MEMs
- 25 Magnetic Recording
- 26 Photomasks
- A Glossary of Terms – EMC Terminology
- B Appendix B. ESD Standards
- C Index
- D Wiley Series in Electrostatic Discharge (ESD) and Electrical Overstress (EOS)
- E ESD Design Rules
- F Guard Ring Design Rules
- G EOS Design Rules and Checklist
- H Latchup Design Rules
- I ESD Cookbook
- J EOS Cookbook
- K Latchup Cookbook
- L ESD Design and Release Check List
- M EOS Design and Release Checklist
- N Latchup Design and Release Checklist
- Index
- End User License Agreement
Product information
- Title: The ESD Handbook
- Author(s):
- Release date: April 2021
- Publisher(s): Wiley
- ISBN: 9781119965176
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