Chapter 3

IGBT Structural Design

Abstract

The methodology for designing the insulated-gate bipolar transistor (IGBT) cell structure for achieving a broad range of blocking voltage ratings is discussed in this chapter by using analytical models. The design of the threshold voltage of the IGBT is related to the channel doping profile. The optimization of the doping and width of the drift region in the symmetric and asymmetric structure is described to obtain the required blocking voltage capability. The on-state characteristics for the symmetric, asymmetric, and transparent emitter IGBTs are related to the injected carrier distribution as determined by the minority carrier lifetime in the drift region, the buffer layer doping and thickness, and the ...

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