References

[1] Baliga B.J. Fundamentals of Power Semiconductor Devices. New York: Springer-Science; 2008.

[2] Baliga B.J, et al. The insulated gate rectifier: a new power switching device. In: IEEE International Electron Devices Meeting, Abstract 10.6. 1982:264–267.

[3] Takei M, Harada Y, Ueno K. 600-V IGBT with reverse blocking capability. In: IEEE International Symposium on Power Semiconductor Devices and ICs, Abstract 11.1. 2001:413–416.

[4] Takahashi H, Kaneda M, Minato T. 1200-V class reverse blocking IGBT for AC matrix converter. In: IEEE International Symposium on Power Semiconductor Devices and ICs, Abstract 3.1. 2004:121–124.

[5] Naito T, et al. 1200-V reverse blocking IGBT with low loss for matrix converter. In: IEEE International Symposium ...

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