Chip Design, Protection, and Fabrication
Abstract
Practical insulated gate bipolar transistor (IGBT) devices have a finite size with a well-defined active area where the current flow occurs, an edge termination region surrounding the active area, and pads for locating the wires to carry current into and out of the chip. The design of the active area is related to the on-state current density. Various edge termination designs are discussed to achieve high blocking voltage capability. The integration of over-current, over-voltage, and over-temperature sensors is described for protection of the device. The typical process steps used to manufacture planar and trench-gate IGBTs are provided. The control of minority carrier lifetime is described ...
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