Models for the insulated gate bipolar transistor (IGBT) are utilized for simulation of power circuit operation. A physics-based circuit model has been created for use with the SABER software for the symmetric blocking and asymmetric blocking IGBT structures. An electrothermal IGBT model has also been created to allow analysis of self-heating in the device during circuit operation.
KeywordsAsymmetric IGBT; Circuit model; Electrothermal model; Nonpunch-through IGBT; Punch-through IGBT; SABER software; Symmetric IGBT
Good models are required for the insulated gate bipolar transistor (IGBT) in order to understand the principles of its operation in the blocking mode, the on-state, and during switching between these states. ...
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