Thermal Design, 2nd Edition

Appendix EThermoelectric Properties

Table E.1 Thermoelectric properties of most updated semiconductors.

Type	Temperature (K)	|α| (μV/K)	σ (Ωcm)−1	ke (W/mK)	k (W/mK)	ZT
Bi2Te3	p‐type single crystals	300	230	500	0.6	2.0	0.5	Jeon et al. [1]
BiSbTe	p‐type, nanocomposites	400	220	700	0.6	1.0	1.4	Poudel et al. [2]
Bi2Te2.7Se0.3	n‐type nanocomposites	400	210	700	0.6	1.2	1.0	Yan et al. [3]
PbTe‐SrTe	p‐type nanocomposites	900	270	300	0.4	1.1	2.2	Biswas et al. [4]
Si70Ge30	n‐type single crystals	1000	350	320	0.5	4.0	0.8	Dismukes et al. [5]
Si80Ge20	n‐type nanocomposites	1200	250	400	0.5	2.8	1.3	Wang et al. [6]
CoSb3	n‐type single crystals	800	240	800	0.5	4.0	0.6	Caillat et al. [7]
Yb‐CoSb3	n‐type, Yb‐filled skutterudites	800	200	1600	2.0	3.2	1.3	Tang et al. [8]
Yb14MnSb11	p‐type, zintl compound	1200	190	200	0.7	1.1	Brown et al. [9]
La3Te4	n‐type single crystals	1200	280	80	0.3	0.7	1.1	May et al. [10]

Figure E.1 Dimensionless figures of merit for various thermoelectric materials.

E.1 BISMUTH TELLURIDE P‐TYPE

Figure E.2 For p‐type Bi₂Te₃ for single crystals [1] and BiSbTe for nanocomposites [2], (a) Seebeck coefficient, (b) electrical conductivity, and (c) thermal conductivity, and (d) dimensionless figure of merit versus temperature.

Source: Adapted ...