D. Ye, Virginia Commonwealth University, USA
T.-M. Lu, Rensselaer Polytechnic Institute, USA
We observed that the deposition of silicon (Si) nanostructured thin films on a patterned substrate with oblique angle incidence flux gives rise to a phenomenon referred to as ‘fan-out’ growth, which entails the overgrowth of the structures along the direction perpendicular to the incident deposition flux. We concluded in our Monte Carlo simulations that the side-sticking of incoming particles to the previously deposited particles is the cause of ‘fan-out’ growth. We have designed two methods to overcome fan-out growth: ‘two-phase’ rotation and ...
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