Polarity controlled epitaxy of III-nitrides and ZnO by molecular beam epitaxy
X.Q. Wang, Peking University
P.R. China and A. Yoshika w a, Chiba University, Japan
This chapter discusses the polarity controlled epitaxy of III-nitrides and ZnO by molecular beam epitaxy. The chapter first explains what the lattice polarity is and reviews the available detection methods for the polarity. After a brief introduction of the polarity behavior at heteroepitaxy and homoepitaxy, the chapter discusses the polarity controlled epitaxy of GaN, AlN, InN and ZnO, paying special attention to InN.
III-nitrides and ZnO are very promising materials which have many ...