Polarity controlled epitaxy of III-nitrides and ZnO by molecular beam epitaxy
X.Q. Wang, Peking University
P.R. China and A. Yoshika w a, Chiba University, Japan
Abstract:
This chapter discusses the polarity controlled epitaxy of III-nitrides and ZnO by molecular beam epitaxy. The chapter first explains what the lattice polarity is and reviews the available detection methods for the polarity. After a brief introduction of the polarity behavior at heteroepitaxy and homoepitaxy, the chapter discusses the polarity controlled epitaxy of GaN, AlN, InN and ZnO, paying special attention to InN.
Key words
polarity control
epitaxy
III-nitrides
InN
ZnO
12.1 Introduction
III-nitrides and ZnO are very promising materials which have many ...
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