December 2012
Intermediate to advanced
264 pages
7h 17m
English
Content preview from Transmission Electron Microscopy in Micro-nanoelectronicsBecome an O’Reilly member and get unlimited access to this title plus top books and audiobooks from O’Reilly and nearly 200 top publishers, thousands of courses curated by job role, 150+ live events each month,
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Index
113 defects
2D dopant distribution
A
amorphous layer
analytical transmission electron microscopy
annular dark field (ADF)
arsenic
atomic structure
B
bending
Bohr magneton
bubbles
burgers vector
C
chemical reaction
CMOS and BiCMOS transistors
CNT/Carbon Nanotube
contact etch stop layers (CESL)
contacting
convergent beam electron diffraction (CBED)
crystallization state
current injection
D
Dark Field Electron Holography (DFEH)
Dark-field electron holography (DFEH)
defects
device
dielectric constant
direct wafer bonding (DWB)
dislocations
Dopant profiling
Dopant segregation
dual-beam
E
electro-magnetic field
electron beam induced deposition (EBID)
electron diffractionm
electron energy loss spectroscopy (EELS)
electron holography (EH)
electron wave
electrostatic phase shift
elemental profile
energy dispersive X-ray spectroscopy (X-EDS)
energy filter
EOR defects
F
FIB/Focused Ion Beam
FinFET
finite element modeling
focused ion beam (FIB)
focused ion beam milling
fresnel contrast
G
g.b analysis
gas injection system (GIS)
gas platelets
gate oxide
Ge
geometric phase analysis (GPA)
grain boundary
H
habit plane
H-Bar lamella
heating
high annular dark field (HAADF)
high resolution transmission electron microscopy (HRTEM)
High-k
high-resolution transmission electron microscopy (HRTEM)
HoloDark
hydrogen implantation
I, K
inactive thickness
inside/outside contrast
interdiffusion
interfacial layerm
interferometry
ion beam induced defects
ion beam induced deposition (IBID)
ion beam milling ...
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