Index

113 defects

2D dopant distribution

A

amorphous layer

analytical transmission electron microscopy

annular dark field (ADF)

arsenic

atomic structure

B

bending

Bohr magneton

bubbles

burgers vector

C

chemical reaction

CMOS and BiCMOS transistors

CNT/Carbon Nanotube

contact etch stop layers (CESL)

contacting

convergent beam electron diffraction (CBED)

crystallization state

current injection

D

Dark Field Electron Holography (DFEH)

Dark-field electron holography (DFEH)

defects

device

dielectric constant

direct wafer bonding (DWB)

dislocations

Dopant profiling

Dopant segregation

dual-beam

E

electro-magnetic field

electron beam induced deposition (EBID)

electron diffractionm

electron energy loss spectroscopy (EELS)

electron holography (EH)

electron wave

electrostatic phase shift

elemental profile

energy dispersive X-ray spectroscopy (X-EDS)

energy filter

EOR defects

F

FIB/Focused Ion Beam

FinFET

finite element modeling

focused ion beam (FIB)

focused ion beam milling

fresnel contrast

G

g.b analysis

gas injection system (GIS)

gas platelets

gate oxide

Ge

geometric phase analysis (GPA)

grain boundary

H

habit plane

H-Bar lamella

heating

high annular dark field (HAADF)

high resolution transmission electron microscopy (HRTEM)

High-k

high-resolution transmission electron microscopy (HRTEM)

HoloDark

hydrogen implantation

I, K

inactive thickness

inside/outside contrast

interdiffusion

interfacial layerm

interferometry

ion beam induced defects

ion beam induced deposition (IBID)

ion beam milling ...

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