Wide Bandgap Semiconductors for Power Electronics

3Homoepitaxial Growth of 4H‐SiC on Vicinal Substrates

Birgit Kallinger

Fraunhofer Institute for Integrated Systems and Device Technology IISB, Department Materials, Schottkystraße 10, 91058, Erlangen, Germany

3.1 Introduction

Many review papers [1–3] and text books, e.g. [4, 5]), have been published over the decades on SiC epitaxial growth and defect characterization. These publications are mirroring the great advance that has been made with regard to structural quality of substrate and epitaxial layer, epitaxial growth process, and scientific insights. This technological progress brought the focusing on 4H‐SiC polytype by step‐flow growth mode on vicinal substrates with a specified off‐cut using a CVD process for SiC power electronic applications ...