4Industrial Perspective of SiC Epitaxy
Albert A. Burk Jr., Michael J. O'Loughlin, Denis Tsvetkov, and Scott Ustin
Wolfspeed, A Cree Company, 4600 Silicon Dr., Durham, NC, 27703, USA
4.1 Introduction
In this chapter, the status of high‐throughput production of large‐area silicon carbide (SiC) epitaxial wafers for advanced SiC power devices is addressed. Because of the nature of this compound semiconductor, and high temperatures required, SiC epitaxial growth is very challenging. While maturing into a reliable manufacturing technology, it is still a highly competitive and rapidly developing field, making any review difficult. The authors of this paper apologize in advance for any inadvertent omission. A companion paper in this volume will focus ...
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