6Intrinsic and Extrinsic Electrically Active Point Defects in SiC
Ulrike Grossner1, Joachim K. Grillenberger2, Judith Woerle1, Marianne E. Bathen1,3, and Johanna Müting1
1Advanced Power Semiconductor Laboratory, ETH Zurich, Zurich, Switzerland
2Now with Paul Scherrer Institute, Villigen, Switzerland
3Department of Physics/Centre for Materials Science and Nanotechnology, University of Oslo, N‐0316 Oslo, Norway
No crystal is perfect – based on the unit of amount of substance in the International System of Units (SI), the mole [1], we typically assume a prototypical crystal to be composed of the order of 
atoms. With a density of SiC of 3.21 g/ ...
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