Wide Bandgap Semiconductors for Power Electronics

10Epitaxial Graphene on Silicon Carbide as a Tailorable Metal–Semiconductor Interface

Michael Krieger and Heiko B. Weber

Friedrich‐Alexander‐Universität Erlangen-Nürnberg (FAU), Department Physik, Lehrstuhl für Angewandte Physik, Staudtstraße 7, 91058 Erlangen, Germany

10.1 Introduction

The discovery of monolayer graphene growth on silicon carbide (SiC) [1–4] provides a unique opportunity to rediscover the very fundamental concept of a metal–semiconductor interface [5, 6] providing an accurately defined structure with atomic precision. This chapter summarizes recent experiments and technological concepts that benefit from this exceptional monolithic material system. We start with a review of the formation of the graphene layer and its tailorable ...