Wide Bandgap Semiconductors for Power Electronics

11Device Processing Chain and Processing SiC in a Foundry Environment

Arash Salemi¹, Minseok Kang¹, Woongje Sung², and Anant K. Agarwal¹

¹The Ohio State University, Department of Electrical and Computer Engineering, 209 Caldwell Lab, 2015 Neil Avenue, Columbus, OH, 43210, USA

²Colleges of Nanoscale Science and Engineering, State University of New York Polytechnic Institute Albany, NY, 12203, USA

11.1 Introduction

Silicon carbide (SiC) metal–oxide semiconductor field‐effect transistors (MOSFETs) became commercially available in January 2011 to satisfy the demand of a higher voltage, lower on‐resistance, and faster device. Since then, the availability of larger substrates, lower epitaxial defect density, mature process technology, higher demand ...