January 2022
Intermediate to advanced
736 pages
24h 41m
English
Robert Kucharski1, Tomasz Sochacki1, Boleslaw Lucznik1, Mikolaj Amilusik1, Karolina Grabianska1, Malgorzata Iwinska1 and Michal Bockowski1,2
1Institute of High Pressure Physics of the Polish Academy of Sciences, Sokolowska 29/37, 01‐142 Warsaw, Poland
2Nagoya University, Center for Integrated Research of Future Electronics, Institute of Materials and Systems for Sustainability, C3‐1 Furo‐cho, Chikusa‐ku, Nagoya, 464‐8603, Japan
For the last three decades, the nitride community has struggled with crystallization of bulk gallium nitride (GaN) and fabrication of native substrates. The most popular GaN‐based devices, light‐emitting diodes (LEDs), are built on foreign sapphire substrates. ...
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