Wide Bandgap Semiconductors for Power Electronics

18Ammonothermal and HVPE Bulk Growth of GaN

Robert Kucharski¹, Tomasz Sochacki¹, Boleslaw Lucznik¹, Mikolaj Amilusik¹, Karolina Grabianska¹, Malgorzata Iwinska¹ and Michal Bockowski^1,2

¹Institute of High Pressure Physics of the Polish Academy of Sciences, Sokolowska 29/37, 01‐142 Warsaw, Poland

²Nagoya University, Center for Integrated Research of Future Electronics, Institute of Materials and Systems for Sustainability, C3‐1 Furo‐cho, Chikusa‐ku, Nagoya, 464‐8603, Japan

18.1 Introduction

For the last three decades, the nitride community has struggled with crystallization of bulk gallium nitride (GaN) and fabrication of native substrates. The most popular GaN‐based devices, light‐emitting diodes (LEDs), are built on foreign sapphire substrates. ...