Wide Bandgap Semiconductors for Power Electronics

19GaN on Si: Epitaxy and Devices

Hidekazu Umeda

Panasonic Industrial Devices Europe GmbH, Zeppelinstraße 19,, 21337, Lüneburg, Germany

19.1 Introduction

The history of GaN research fights against GaN crystal growth. Thanks to the pioneers' technical breakthroughs, GaN optoelectric devices such as light‐emitting diodes (LEDs) have been bringing great benefits in our life as in lighting bulb, backlight of smartphones, and thin flat panel displays [1–8].

In addition to the GaN optoelectronic devices, GaN‐based materials are very attractive for various electron devices taking advantages of its excellent electron transport properties such as high breakdown field, high thermal conductivity, and high carrier saturation velocity. AlGaN/GaN heterojunction ...