12 Comprehensive Analysis of S-Parameters of 2-D MODFET for Microwave Applications
E.C.E. Department, GJU S&T, Hisar, Haryana, India
- Contents
- 12.1 Introduction
- 12.2 Model Formulation
- 12.2.1 Current-Voltage Characteristics
- 12.2.2 Capacitance – Voltage Characteristics
- 12.2.3 Gate-Drain Capacitance
- 12.2.4 Gate-Source Capacitance
- 12.3 Small-Signal Parameters
- 12.3.1 Drain/Output Conductance
- 12.3.2 Transconductance
- 12.3.3 Cut-Off Frequency
- 12.3.4 Transit Time
- 12.4 Y-Parameters Extraction
- 12.5 S- Parameters Extraction
- 12.6 Gains
- 12.6.1 Unilateral Power Gain
- 12.6.2 Maximum Stable Power Gain
- 12.6.3 Maximum Unilateral Transducer Power Gain
- 12.6.4 Unilateral Figure of Merit (FOM)
- 12.7 Results and Discussion
- 12.8 Conclusion
- References
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