book

Silicon Technologies: Ion Implantation and Thermal Treatment

Name: Silicon Technologies: Ion Implantation and Thermal Treatment
Author: Annie Baudrant
ISBN: 9781848212312

by Annie Baudrant

July 2011

Intermediate to advanced

368 pages

9h 8m

English

Wiley

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Cover
Title Page
Copyright
Preface
Chapter 1: Silicon and Silicon Carbide Oxidation
1.1. Introduction1.2. Overview of the various oxidation techniques1.2.1. General information1.2.1.1. Oxidation process1.2.1.2. Deposition process1.2.2. Most frequently used methods in the semiconductor industry1.2.2.1. Thermal oxidation1.2.2.1.1. Oxidation under dry oxygen1.2.2.1.2. Oxidation under water vapor or wet oxidation1.2.2.2. Chemical vapor deposition1.2.2.2.1. Low temperature with normal pressure (LTCVD)1.2.2.2.2. Low pressure (LPCVD)1.2.2.2.3. Plasma enhanced (PECVD)1.2.3. Other methods1.2.3.1. Anodic oxidation1.2.3.2. Oxidation assisted by plasma1.2.3.2.1. Discharge with constant current1.2.3.2.2. Hot cathode discharge1.2.3.2.3. High frequency discharge1.2.3.3. Low pressure oxidation under an ultra-high vacuum1.2.3.4. High pressure oxidation1.3. Some physical properties of silica1.3.1. The silica structure1.3.2. Three useful parameters of silica1.3.3.Transport properties in silica1.3.3.1. Diffusion of rare gases in silica1.3.3.1.1. Solubility1.3.3.1.2. Diffusivity1.3.3.2. Molecular diffusion in silica1.3.3.2.1. Hydrogen diffusion1.3.3.2.2. Water diffusion1.3.3.2.3. Oxygen diffusion1.4. Equations of atomic transport during oxidation1.4.1.Transport equations in the general case1.4.2. First approximation: C(x) varies slowly with the depth x1.4.2.1. Application to the transport of neutral species in an isotropic environment1.4.2.2. Application to the transport of species charged under electric field ε(x)1.4.3. Second approximation: ε(x) varies slowly with the depth x1.4.4. Applications of the transport equations to thermal and anodic oxidation1.4.4.1. Anodic oxidation1.4.4.2. Thermal oxidation1.5. Is it possible to identify the transport mechanisms taking place during oxidation?1.5.1. Identification using isotopic labeling techniques1.5.1.1. First hypothesis: silicon is the only mobile species1.5.1.2. Second hypothesis: oxygen is the only mobile species1.5.1.2.1. Oxygen diffusion without interaction with the silica network1.5.1.2.2. Oxygen diffusion with interaction with the silica network1.5.1.2.3. Oxygen diffusion by a gradual movement of oxygen atoms of the network1.5.2. Important results for the thermal oxidation of silicon under dry O21.5.2.1. Films with thickness higher than 20 nm1.5.2.2. Films with thicknesses lower than 10 nm1.5.3. Important results for wet thermal oxidation1.5.4. Conclusions on the atomic transport mechanisms during silicon thermal oxidation1.5.5. Experimental results and conclusions on the transport mechanisms during the anodic oxidation of silicon1.5.6. Important experimental results from dry SiC thermal oxidation1.6. Transport equations in the case of thermal oxidation1.6.1. General information on flux and on growth kinetics1.6.2. Flux calculation for neutral mobile species1.6.3. Flux calculation for ion mobile species1.6.3.1. Case of very thin films (X ≤ 3 nm)1.6.3.2. Case of thick films (X >> 3 nm)1.7. Deal and Grove theory of thermal oxidation1.7.1. Flux calculation1.7.1.1. Flux in gas Fg and net flux at the gas/oxide interface F11.7.1.2. Net flux in oxide, F21.7.1.3. Flux at the oxide/silicon interface, F31.7.2. Growth kinetics equations1.7.3. Remarks on the fluctuations of the oxidation constants kP and kL1.7.4. Determination of the oxidation parameters from experimental results1.7.5. Confrontation of the Deal and Grove theory with experimental results1.7.6. Conclusions on the Deal and Grove theory1.8. Theory of thermal oxidation under water vapor of silicon1.8.1. Concentration profiles expected for H2O1.8.2. Concentration profiles expected for the OH groups1.8.3. Concentration profiles expected for H21.8.4. Concentration profiles expected for H1.8.5. Comparison of the expected and the experimental profiles1.8.6. Wolters theory1.9. Kinetics of growth in O2 for oxide films < 30 nm1.9.1. Introduction1.9.2. Oxidation models of thin films1.9.3. Case of ultra-thin films (< 5 nm)1.9.4. On line simulator1.9.5. Kinetics and models of SiC oxidation1.10. Fluctuations of the oxidation constants under experimental conditions1.10.1. Role of the pressure1.10.1.1. Wet oxidation1.10.1.2. Dry oxidation1.10.2. Role of the temperature1.10.2.1. Wet oxidation1.10.2.2. Dry oxidation1.10.3. Role of the crystal direction1.10.3.1. Wet oxidation1.10.3.2. Dry oxidation1.10.4. Role of doping1.11. Conclusion1.12. Bibliography
Chapter 2: Ion Implantation
2.1. Introduction2.2. Ion implanters2.2.1. General description2.2.2. Ion sources2.2.3. Mass analysis and beam optics2.2.4. Current measurement2.2.5. Production throughput, temperature control and charge effects2.3. Ion range2.3.1. Binary collision and stopping power2.3.2. Profile of the implanted ions2.3.3. Backscattering, surface sputter and channeling2.3.4. Implantation through a mask2.4. Creation and healing of the defects2.4.1. Primary collision and cascade2.4.2. Point defects2.4.3. Accumulation of damages, amorphization2.4.4. Damage healing and dopant activation2.5. Applications in traditional technologies and new tendencies2.5.1. Common implantations2.5.2. Other applications and new tendencies2.5.2.1. Gettering2.5.2.2. High energy implantation2.5.2.3. Ultra-thin junctions2.5.2.4. SIMOX and Smart-Cut™2.6. Conclusion2.7. Bibliography
Chapter 3: Dopant Diffusion: Modeling and Technological Challenges
3.1. Introduction3.2. Diffusion in solids 3.2.1. General information3.2.1.1. Fick’s first law3.2.1.2. Generalized flow: drift terms3.2.1.3. Fick’s second law and simple profiles calculation3.2.1.4. Boltzmann-Matano analysis3.2.2. Elementary mechanisms3.2.2.1. Atomic mechanisms3.2.2.2. Atomic theory of the diffusion coefficient3.2.3. Semiconductor specificities3.2.3.1. Doping influence3.2.3.2. Influence of the induced electric field3.3. Dopant diffusion in single-crystal silicon3.3.1. Predeposition methods3.3.1.1. Predepositionin vapor phase3.3.1.2. Deposition in the solid phase3.3.2. Main experimental observations3.3.2.1. Diffused predepositions in neutral atmosphere3.3.2.2. Couplings between impurities3.3.2.3. The oxidation influence3.3.3. Modeling3.3.3.1. “Normal” diffusion3.3.3.2. “Anomalous” diffusion: diffusion by pairs3.4. Examples of associated engineering problems3.4.1. Redistribution of the implanted dopants: transient enhanced diffusion3.4.2. Engineering of ultra-thin junctions3.4.2.1. Engineering of point defects3.4.2.2. Fluorine co-implantation3.4.2.3. Carbon co-implantation3.4.3. Reverse short channel effect3.5. Dopant diffusion in germanium3.5.1.Thermal diffusion process3.5.1.1. Self-diffusion3.5.1.2. Donors diffusion3.5.1.3. Boron diffusion3.5.2. Implanted dopants and junctions engineering3.5.2.1. P+/N junctions3.5.2.2. N+/P junctions3.6. Conclusion3.7. Bibliography
Chapter 4: Epitaxy of Strained Si/Si1-x Gex Heterostructures
4.1. Introduction4.1.1. General introduction4.1.2. Chemical vapor deposition from the beginning4.1.2.1. Introduction4.1.2.2. CVD in general4.1.2.3. High temperature conventional Si epitaxy4.1.2.4. Low-temperature Si and SiGe epitaxy4.1.2.5. Development of CVD equipment4.1.3. The Epi Centura epitaxy tool4.1.4. Some general concepts of epitaxy4.2. Engineering of the pMOSFET transistor channel using pseudomorphic SiGe layers4.2.1. Introduction4.2.2. Growth kinetics of Si and SiGe in chlorinated chemistry4.2.2.1. Growth kinetics of Si in chlorinated chemistry4.2.2.2. Growth kinetics of SiGe in chlorinated chemistry4.2.3. Transposition on patterned substrates4.2.4. pMOS transistors incorporating SiGe layers4.3. Engineering of the nMOSFET transistor channel using pseudomorphic Si1-yCy layers; SiGeC diffusion barriers4.3.1. Introduction4.3.2. Incorporation of C in Si and SiGe4.3.3. Si/Si1-yCy/Si stacks for nMOS transistors4.3.4. nMOS transistors incorporating Si1-yCy layers or SiGeC diffusion barriers4.4. Epitaxy of Si raised sources and drains on ultra-thin SOI substrates4.4.1. Introduction4.4.2. Problems encountered on ultra-thin SOI substrates4.4.3. Method developed in response4.5. Epitaxy of recessed and raised SiGe:B sources and drains on ultra-thin SOI and SON substrates4.5.1. Introduction4.5.2. Growth kinetics and boron doping of SiGe in chlorinated chemistry4.5.3. Recessed and raised SiGe:B sources and drains on FD-SOI and SON substrates4.6. Virtual SiGe substrates: fabrication of sSOI substrates and of dual c-Ge / t-Si channels4.6.1. Introduction4.6.2. Growth and structural properties of virtual SiGe substrates4.6.3. Growth and structural properties of tensily-strained Si layers on SiGe virtual substrates4.6.4. Fabrication of sSOI and XsSOI substrates & transport properties4.6.5. c-Ge/t-Si dual channels on Si0.5Ge0.5 virtual substrates4.7. Thin or thick layers of pure Ge on Si for nano and opto-electronics4.7.1. Introduction4.7.2. Structural properties of thick layers of Ge on Si (001) and of GeOI4.7.3. Optical and transport properties of thick Ge layers on Si (001) and of GeOI substrates4.7.4. Structural and optical properties of Ge islands on Si (001)4.8. Devices based on sacrificial layers of SiGe4.8.1. Introduction4.8.2. Selective HCl etching of SiGe selectively compared to Si4.8.3. Localized SOI devices and SON4.8.4. Devices based on multi-wires and on multi-channels4.9. Conclusions and prospects4.9.1. General conclusion4.9.2. Prospects4.10. Bibliography
List of Authors
Index

Overview

The main purpose of this book is to remind new engineers in silicon foundry, the fundamental physical and chemical rules in major Front end treatments: oxidation, epitaxy, ion implantation and impurities diffusion.

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