Index
A, B
anodic oxidation
backscattering
C
channel
channeling
collision
concentration
contamination
current
D
defects
deposition
diffusion
barrier
diffusivity
doping
dry oxidation
E
energy
epitaxy
F
Fick’s law
flux
furnace
G
growth
kinetics
I, J
impurity
index
ion
implantation
junction
M, O
mobility
modeling
opto-electronics
oxidation
P
plasma
pressure
profile
S
semiconductor
SiC
SiGe
SiGeC
silica
single-crystal
solubility
source
T
technology
temperature
thin film
transistor
transport
v,w
virtual substrates
wet oxidation
Wolters theory
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