High-Speed Devices and Circuits with THz Applications

3   SiGe BiCMOS Technology and Devices

Edward Preisler and Marco Racanelli

CONTENTS

3.1   Introduction

3.2   SIGE HBT Device Physics

3.3   Applications Driving SIGE Development

3.4   SIGE Performance Metrics

3.5   Device Optimization and Roadmap

3.6   Modern SIGE BiCMOS RF Platform Components

3.7   Conclusions

Acknowledgments

References

3.1   INTRODUCTION

Over the past decade SiGe BiCMOS has evolved into a dominant technology for the implementation of radio frequency (RF) circuits. By providing performance, power consumption, and noise advantages over standard complementary metal-oxide-semiconductor (CMOS) transistor technology while leveraging the same manufacturing infrastructure, SiGe BiCMOS technologies can offer a cost-effective solution ...