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High-Speed Devices and Circuits with THz Applications by Jung Han Choi

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4   SiGe HBT Technology and Circuits for THz Applications

Jae-Sung Rieh

CONTENTS

4.1   Introduction

4.2   SiGe HBTs: Device Aspects

4.2.1   DC Characteristics

4.2.2   RF Characteristics

4.2.3   Noise Characteristics

4.2.4   Fabrication Process

4.3   SiGe HBTs: Circuit Applications

4.3.1   Amplifiers

4.3.2   Oscillators

4.3.3   Mixers

4.3.4   Frequency Dividers and Multipliers

4.3.5   Integrated Transmitters and Receivers

4.4   Conclusion

References

4.1   INTRODUCTION

The SiGe heterojunction bipolar transistor (HBT) is basically a Si-based bipolar junction (BJT) transistor with a small amount of Ge added to the base region. The SiGe base region turned out to be a significant performance improver, making SiGe HBTs now accepted as a standard bipolar ...

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