Microwave and Wireless Synthesizers: Theory and Design

INDEX

Acceleration, sensitivity of crystal resonators, 251–252

Accumulator, 179–180

Acquisition, 53–75

lock-in time, 56

loop stability, 64, 67–75

pull-in range, 57, 60–62

pull-out range, 56

time, 9, 13

VCO coarse steering, 62–64

Active integrator, 527, 530

Aliasing, 141

Allan variance, 84–85

Amplifier:

feedback, 328

noise, 129, 131

phase noise characteristics, 101–102

wideband high-gain, 319–330

differential limiters, 323–324

isolation amplifiers, 324–330

slew rate, 320

summation amplifiers, 319–323

Amplitude stability, oscillator, 211–212, 538–544

Analog Devices AD7008 DDS modulator, 491–492

Analog phase-locked loop, 3–4

API counters, 188

API current sources, 188

Asynchronous counters, 330–333

Autocorrelation method, 123

Autonomous circuits, noise analysis, 570

Avantek AT2I 00 chip, equivalent circuits and measurement data, 91–92

Barkhausen criterion, 199

BFO synthesizer, single-loop, 496, 498

Bias voltages, drain-source, 560–561

Bipolar transistor, 101

Gummel-Poon model, 552–553

B-mode, 250, 265–267

Bode diagram, 445, 518–524

type 2 third-order loop, 499

Bridge oscillator, 274–276

Butler oscillator, 256–257, 259, 266–267

fifth overtone, 267

Capacitances, connected in parallel or series with tuner diode, 230–232

Capture time, 9

CD4046 phase/frequency comparator, 308–309

Ceramic resonator oscillator, 453–454

Ceramic resonators, 405–409

Chain scattering parameters, 282

Charge pump, 5

Chebyshev approximation, conjugate roots, 381

Clapp circuit, 209

Clapp–Gouriet circuit, 209–211 ...