Chapter 3
MOS Structure and CMOS Devices
3.1 MOS Structure
3.1.1 Basic Concepts of MOS Structure
A metal-oxide-semiconductor (MOS) structure is fabricated by growing a silicon dioxide (SiO2) layer on a silicon surface and then depositing a metal (or poly-silicon) layer on top of that. Together with p-n junctions, MOS structures have a particularly important role in semiconductor devices. A MOS structure is not only a constituent of field effect transistors (FETs) but also a stand-alone device (MOS capacitor) that is an essential tool for characterizing semiconductor and insulator material properties.
Conceptually, a MOS structure is formed by bringing a metal, an oxide and a semiconductor layer together as shown in Fig. 3.1. We assume that the ...
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