16.5 A FOUR-LAYER p–n–p–n DIODE

A p–n–p–n diode consists of four layers of silicon and these layers are doped alternately with p- and n-type impurities, as shown in Fig. 16.23(a). This can be redrawn as shown in Fig. 16.23(b). The p–n–p–n diode is represented schematically as shown in Fig. 16.23(c).

FIGURE 16.23(a) A p–n–p–n diode

FIGURE 16.23(a) A p–n–p–n diode

FIGURE 16.23(b) The redrawn circuit of Fig. 16.23(a)

FIGURE 16.23(b) The redrawn circuit of Fig. 16.23(a)

FIGURE 16.23(c) The schematic representation of p–n–p–n diode

FIGURE 16.23(c) The schematic representation of p–n–p–n

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