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Microwave Diodes; Quantum-Effect and Hot-Electron Devices

Many semiconductor devices discussed in the previous chapters can be operated in the microwave region (0.1 ~ 3000 GHz). However, two-terminal devices generate the highest power levels per device area in system applications, especially at higher frequencies. Additionally, pulsed operation of these devices overcomes thermal limits and increases peak rf (radio frequency) power levels by more than an order of magnitude.1 In this chapter, we consider some special two-terminal ...

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