11
Crystal Growth and Epitaxy
11.1 SILICON CRYSTAL GROWTH FROM THE MELT
11.2 SILICON FLOAT-ZONE PROCESS
11.3 GaAs CRYSTAL-GROWTH TECHNIQUES
11.4 MATERIAL CHARACTERIZATION
11.5 EPITAXIAL-GROWTH TECHNIQUES
As discussed in Chapter 1, the two most important semiconductors for discrete devices and integrated circuits are silicon and gallium arsenide. In this chapter we describe the common techniques for growing single crystals of these two semiconductors. The starting materials, silicon dioxide for a silicon wafer and gallium and arsenic for a gallium arsenide wafer, are chemically processed to form a high-purity polycrystalline semiconductor ...
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