Chapter 8
Novel diagnostic laser data for mirror facet disorder effects; mechanical stress effects; and facet coating instability
8.1 Diode laser mirror facet studies by Raman
8.1.2 Raman microprobe spectra
8.1.3 Possible origins of the 193 cm−1 mode in (Al)GaAs
8.2 Local mechanical stress in ridge waveguide diode lasers
8.2.2 Measurements – Raman shifts and stress profiles
8.2.3 Detection of “weak spots”
8.2.4 Stress model experiments
8.3 Diode laser mirror facet coating structural instability
8.3.3 Silicon recrystallization by internal power exposure
8.3.4 Silicon recrystallization by external power exposure – control experiments
Introduction
This chapter investigates three phenomena closely linked to the performance and reliability of diode lasers. The first phenomenon is related to specific, microscopic root causes of degradation processes in the susceptible mirror facets. It has been found by Raman microprobe spectroscopy that the strength of lattice disorder is positively correlated with the local facet temperature and negatively correlated with the power level at catastrophic optical mirror damage (COMD) of etched (Al)GaAs laser mirrors. By using different analysis techniques the atomic origin of the lattice disorder effect could be identified. The second phenomenon deals with the formation ...
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