Strain-Engineered MOSFETs

220 Strain-Engineered MOSFETs

7.4 AC Performance

Since scaled p- and n-MOSFETs may nd applications in the RF regime, it is

necessary to develop some gures of merit to assess the device performance.

Using SDevice transient simulation, based on the mobility models described

before, small-signal analysis has been performed to extract RF parameters

for process-induced strained Si MOSFETs.

An AC simulation is performed at equidistant bias points for small-signal AC

analysis at various frequencies, with the gate as the input port, the drain as the

output port, and the source and substrate grounded. The resulting small-signal

admittance and capa ...