## 3.5. Silicon Carbide IGBT Structures

The development of power devices from silicon carbide (SiC) is motivated by its high breakdown field strength. The specific resistance of the drift region for a vertical power device structure is related to the basic semiconductor properties by [18]:

$Ron−specific=4BV2εSμnEC3$

(3.88)

where BV is the breakdown voltage, εS is the dielectric constant, μn is the electron mobility, and EC is the critical electric field for breakdown. The denominator of this equation is commonly referred to as Baliga's Figure-of-Merit (BFOM) for semiconductors. Based upon available information about the properties of silicon carbide, a ...

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