
84
Carbon Electronics
Lithium dose 1.4 × 10
16
ions per cm
2
Lithium energy 30 keV
Implant temperature
800°C
Figure 4.3 The p-n junction in type 2B diamond produced by lithium ion
implantation [Reprinted from Ref. [9], Copyright (1991), with
permission from Elsevier.]
demonstrated. Prins [11] fabricated a bipolar n-p-n transistor by
high defect concen trations that exhibited n-type behavior.
Unipolar devices have been demonstrated the most extensively,
and a short peruse of the most recent Diamond and Related ...