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the “drain” contact. The silicon dioxide substrate can be used as
the gate oxide, and adding a metal contact on the back makes the
semiconducting CNT gateable.
Wrap-around gate Suspended CNT devices
Figure 4.7 Schematics of various CNT FET device structures.
This technique suffers from several drawbacks, which make for
actually has very little contact with the CNT, since the CNT just lies
on top of it and the contact area is therefore very small. Also, due
Carbon Nanotubes