4.1 Introduction4.2 Bipolar Junction Transistor (BJT): Structure of Materials4.3 Different Configurations of Bipolar Junction Transistor4.4 Principle of Working of NPN Transistor (Current Components Through Transistor)4.5 Working of NPN Transistor and Transistor Currents4.6 Base Width Modulation and Early Effect4.7 V-I Characteristics of Common Emitter Transistors (Static Characteristics of Common Emitter Transistor)4.8 Small Signal Low-Frequency Transistor Parameter Definitions (Transistor h-Parameters)4.9 h-Parameter Definitions for Common Emitter Transistor4.10 h-Parameter Definitions for Common Base Transistor4.11 h-Parameter Definitions for Common Collector Transistor4.12 Comparisons of CE, CB, CC Transistor Configurations4.13 Determination of h-Parameters from Transistor Characteristics4.14 Common Base Transistor Characteristics and Parameters4.15 Biasing Circuit for PNP Transistor in Common Emitter Configuration4.16 Explanation of the need of Biasing Voltages for the Transistor Devices4.17 Transistor Specifications4.18 High-Frequency Linear Models for the Common Emitter Transistor4.19 Applications of BJT as a Switch4.20 Typical Structural Details of JFET4.21 Working of JFET4.22 Transfer (Mutual) Characteristics of JFET4.23 Drain (Output) Characteristics of Field Effect Transistor4.24 Definitions of FET Constants4.25 Comparison Between Field Effect Transistor and Transistor4.26 Metal Oxide Semiconductor Field Effect Transistor4.27 Output Characteristics for an N-Channel Enhancement-Mode MOSFET4.28 Depletion Enhancement MOSFET (DE MOSFET) (MOSFET with Built-In Channel)4.29 Comparisons of JFET and MOSFET with respect to Various Features4.30 Unijunction Transistor4.31 Application of UJT Device as an OscillatorSummaryQuestions for PracticeMultiple Choice Questions