6 Introduction to TCAD Device Simulation
Chapter 5 introduced the TCAD process simulation. This chapter focuses on TCAD device simulation.
6.1 Overview
Device simulation investigates the electrical, thermal, and optical properties of semiconductor devices. This section highlights some of the most important aspects for power device simulation, such as impact ionization and mobility. Experienced readers should refer to [39] for a more advanced treatment of simulation equations and explanations. Figure 6.1 shows a simplified flow of TCAD device simulation.
6.2 Basics About Device Simulation
6.2.1 Drift-Diffusion Model
The basic semiconductor model is the drift-diffusion model. Even with more advanced models now available, drift-diffusion remains ...
Get Integrated Power Devices and TCAD Simulation now with the O’Reilly learning platform.
O’Reilly members experience books, live events, courses curated by job role, and more from O’Reilly and nearly 200 top publishers.
