Index
A
ab initio calculations, 33
accelerometer, 437
active clamp circuit, 258
active tuning, 419–20
advanced silicon-on-insulator (SOI) materials
characterisation of electrical properties of SOI transistors, 52–72
advanced methods for advanced FD MOSFETs, 61–4
conventional methods for advanced FD MOSFETs, 60–1
conventional techniques, 53–4
developments in pseudo-MOSFET technique, 58–9
multiple-gate MOSFETs, 66–9
nanowire FETs, 70–2
SOI wafers using pseudo-metal-oxide-semiconductor field-effect transistor technique, 54–7
ultrathin SOI MOSFETs, 64–6
advanced silicon-on-insulator (SOI) transistors
characterisation of electrical properties of SOI materials, 52–72
advanced methods for advanced FD MOSFETs, ...
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