P
P-channel IGBT design, 290–292, 291f
chip design topology, 292f
Paper mills, 309–310, 310f
newsprint winder AC drives configuration, 313f
pulp and paper industry, 312–313
Parabolic aluminized reflector (PAR), 327
Parasitic thyristor, 117–118
suppression, 118–119
ALL topology, 130–131
cell topology, 127–131
deep P+ diffusion, 119–122
diverter structure, 125–126
latchup proof structure, 131–133
P-base doping concentration, 123f
reducing gate oxide thickness, 122–125
Particle physics, 596
CERN LHC, 602–604
Fermilab main injector, 599–600
SLAC, 596–597
PEF, See ...

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